SemiQ Gabatarwa
- Kamfanin Global Power Technologies Group, Inc. ("GPTG") wanda aka kafa a 2007 shi ne cibiyar bunkasawa da masana'antu da aka sadaukar da su ga kayan samfurori da suka shafi fasahar Silicon Carbide (SiC). Wadannan samfurori za su zama asali ga masana'antun lantarki da masana'antun makamashi a cikin shekarun nan masu zuwa inda ake buƙatar fasahar da aka ci gaba don ƙananan kuɗi, ƙarfin ƙarfin ƙarfin wutar lantarki, fassarar da watsawa.
Kayan samfur
Muna da babbar fa'ida a kan, kuma na iya samun sassan da aka cire daga cikin babban hanyar sadarwa na amintattu.
SemiQ kayayyaki
-
GSID150A120S5C1
- IGBT MODULE 1200V 285A
-
GSXD060A015S1-D3
- DIODE SCHOTTKY 150V 60A SOT227
-
GP1M003A050FG
- MOSFET N-CH 500V 2.5A TO220F
-
GP1M009A020FG
- MOSFET N-CH 200V 9A TO220F
-
GHXS030A120S-D3
- DIODE SCHOTKY 1200V 30A SOT227
-
GP1M008A050HG
- MOSFET N-CH 500V 8A TO220
-
GPA040A120L-FD
- IGBT 1200V 80A 480W TO264
-
GSXD030A008S1-D3
- DIODE SCHOTTKY 80V 30A SOT227
-
GSXD050A015S1-D3
- DIODE SCHOTTKY 150V 50A SOT227
-
GP1M006A065PH
- MOSFET N-CH 650V 5.5A IPAK
-
GHIS100A120T2P2
- SI IGBT & SIC SBD HYBRID MODULES
-
GHXS020A060S-D4
- DIODE SBD SHOTT 600V 20A SOT227
-
GPA020A135MN-FD
- IGBT 1350V 40A 223W TO3PN
-
GP1M011A050FSH
- MOSFET N-CH 500V 10A TO220F
-
GDP06S060D
- DIODE SCHOTTKY 600V 6A TO263-2
-
GP1M008A050FG
- MOSFET N-CH 500V 8A TO220F
-
GP2D020A120B
- DIODE SCHOTTKY 1.2KV 20A TO247-2
-
GPA040A120MN-FD
- IGBT 1200V 80A 480W TO3PN
-
GP2M002A060HG
- MOSFET N-CH 600V 2A TO220
-
GHIS040A060S-A2
- IGBT BUCK CHOP 600V 80A SOT227
-
GSID100A120T2C1A
- SILICON IGBT MODULES
-
GHXS050A060S-D4
- DIODE SCHOTT SBD 600V 50A SOT227
-
GP1M016A060FH
- MOSFET N-CH 600V 16A TO220F
-
GHIS060A120S-A1
- IGBT BOOST CHP 1200V 120A SOT227
-
GP1M009A020CG
- MOSFET N-CH 200V 9A DPAK
-
GSXF060A120S1-D3
- DIODE FAST REC 1200V 60A SOT227
-
GP2D005A060A
- DIODE SCHOTTKY 600V 15A TO220-2
-
GCMS040A120S1-E1
- SIC MOSFET/ SBD MODULE SOT-227 C
-
GDP15S120A
- DIODE SCHOTTKY 1.2KV 15A TO220-2
-
GP1M018A020HG
- MOSFET N-CH 200V 18A TO220
-
GSXD160A008S1-D3
- DIODE SCHOTTKY 80V 160A SOT227
-
GHIS060A120S1-E1
- SI IGBT/ SIC SBD HYBRID MODULE S
-
GHXS060A120S-D3
- MOD SBD BRIDGE 1200V 60A SOT227
-
GP2M005A050HG
- MOSFET N-CH 500V 4.5A TO220
-
GP2M004A065CG
- MOSFET N-CH 650V 4A DPAK
-
GSXD160A015S1-D3
- DIODE SCHOTTKY 150V 320A SOT227
-
GP3D050A120B
- DIODE SCHOTTKY 1.2KV 50A TO247-2
-
GP1M013A050FH
- MOSFET N-CH 500V 13A TO220F
-
GHXS030A060S-D3
- DIODE SBD SHOTT 600V 30A SOT227
-
GSXD050A006S1-D3
- DIODE SCHOTTKY 60V 50A SOT227
-
GSXD120A006S1-D3
- DIODE SCHOTTKY 60V 240A SOT227
-
GP3D050A060B
- DIODE SCHOTTKY 600V 50A TO247-2
-
GP1M004A090FH
- MOSFET N-CH 900V 4A TO220F
-
GP2M008A060CG
- MOSFET N-CH 600V 7.5A DPAK
-
GSXD100A010S1-D3
- DIODE SCHOTTKY 100V 100A SOT227
-
GP2D006A060C
- DIODE SCHOTTKY 600V 6A TO252-2
-
GP1M006A070F
- MOSFET N-CH 700V 5A TO220F
-
GSXF120A120S1-D3
- DIODE FAST REC 1200V 120A SOT227
-
GP1M009A020HG
- MOSFET N-CH 200V 9A TO220
-
GHIS040A060S-A1
- IGBT BOOST CHOP 600V 80A SOT227