A stock: 52243
Muna mai rarraba kayan aiki na IPB60R080P7ATMA1 tare da farashi mai gasa sosai.Bincika IPB60R080P7ATMA1 Sabuwar hanyar pirce, kaya da kuma jigon lokacin yanzu ta amfani da saurin RFQ.Taronmu na da inganci da amincin IPB60R080P7ATMA1 ba zai zama masu canzawa ba, kuma mun aiwatar da ingantacciyar dubawa da aiwatarwa don tabbatar da amincin IPB60R080P7ATMA1.Hakanan zaka iya samun AAAE0 datasheet anan.
Daidaitaccen kayan aikin haɗin gwiwa IPB60R080P7ATMA1
Vgs (th) (Max) @ Id | 4V @ 590µA |
---|---|
Vgs (Max) | ±20V |
Fasaha | MOSFET (Metal Oxide) |
Asusun na'ura mai ba da kyauta | D²PAK (TO-263AB) |
Sauti | CoolMOS™ P7 |
Rds On (Max) @ Id, Vgs | 80 mOhm @ 11.8A, 10V |
Dissipation Power (Max) | 129W (Tc) |
Packaging | Cut Tape (CT) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Sauran Sunaye | IPB60R080P7ATMA1CT |
Temperayi mai aiki | -55°C ~ 150°C (TJ) |
Nau'in Sanya | Surface Mount |
Sensitivity Level (MSL) | 1 (Unlimited) |
Matsayin Farko / Matsayin RoHS | Contains lead / RoHS Compliant |
Ƙarfin shigarwa (Ciss) (Max) @ Vds | 2180pF @ 400V |
Ƙofar Ƙofar (Qg) (Max) @ Vgs | 51nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Fitar da Rigar (Max Rds On, Min Rds On) | 10V |
Drain to Source Rashin wutar lantarki (Vdss) | 650V |
Bayanin Dalla-dalla | N-Channel 650V 37A (Tc) 129W (Tc) Surface Mount D²PAK (TO-263AB) |
A halin yanzu - Ci gaba mai dadi (Id) @ 25 ° C | 37A (Tc) |