A stock: 56160
Muna mai rarraba kayan aiki na SI3900DV-T1-E3 tare da farashi mai gasa sosai.Bincika SI3900DV-T1-E3 Sabuwar hanyar pirce, kaya da kuma jigon lokacin yanzu ta amfani da saurin RFQ.Taronmu na da inganci da amincin SI3900DV-T1-E3 ba zai zama masu canzawa ba, kuma mun aiwatar da ingantacciyar dubawa da aiwatarwa don tabbatar da amincin SI3900DV-T1-E3.Hakanan zaka iya samun AAAE0 datasheet anan.
Daidaitaccen kayan aikin haɗin gwiwa SI3900DV-T1-E3
Volta - Test | - |
---|---|
Voltage - Breakdown | 6-TSOP |
Vgs (th) (Max) @ Id | 125 mOhm @ 2.4A, 4.5V |
Sauti | TrenchFET® |
Matsayin RoHS | Digi-Reel® |
Rds On (Max) @ Id, Vgs | 2A |
Ikon - Max | 830mW |
Faɗakarwa | SOT-23-6 Thin, TSOT-23-6 |
Sauran Sunaye | SI3900DV-T1-E3DKR |
Temperayi mai aiki | -55°C ~ 150°C (TJ) |
Nau'in Sanya | Surface Mount |
Sensitivity Level (MSL) | 1 (Unlimited) |
Ma'aikaci Tsawon Gwaninta | 15 Weeks |
Lambar Sakamako | SI3900DV-T1-E3 |
Ƙarfin shigarwa (Ciss) (Max) @ Vds | 4nC @ 4.5V |
Ƙofar Ƙofar (Qg) (Max) @ Vgs | 1.5V @ 250µA |
FET Feature | 2 N-Channel (Dual) |
Fadadaccen Magana | Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP |
Drain to Source Rashin wutar lantarki (Vdss) | Logic Level Gate |
Bayani | MOSFET 2N-CH 20V 2A 6-TSOP |
A halin yanzu - Ci gaba mai dadi (Id) @ 25 ° C | 20V |