A stock: 51948
Muna mai rarraba kayan aiki na SI3445DV-T1-GE3 tare da farashi mai gasa sosai.Bincika SI3445DV-T1-GE3 Sabuwar hanyar pirce, kaya da kuma jigon lokacin yanzu ta amfani da saurin RFQ.Taronmu na da inganci da amincin SI3445DV-T1-GE3 ba zai zama masu canzawa ba, kuma mun aiwatar da ingantacciyar dubawa da aiwatarwa don tabbatar da amincin SI3445DV-T1-GE3.Hakanan zaka iya samun AAAE0 datasheet anan.
Daidaitaccen kayan aikin haɗin gwiwa SI3445DV-T1-GE3
Vgs (th) (Max) @ Id | 1V @ 250µA |
---|---|
Vgs (Max) | ±8V |
Fasaha | MOSFET (Metal Oxide) |
Asusun na'ura mai ba da kyauta | 6-TSOP |
Sauti | TrenchFET® |
Rds On (Max) @ Id, Vgs | 42 mOhm @ 5.6A, 4.5V |
Dissipation Power (Max) | 2W (Ta) |
Packaging | Tape & Reel (TR) |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Temperayi mai aiki | -55°C ~ 150°C (TJ) |
Nau'in Sanya | Surface Mount |
Sensitivity Level (MSL) | 1 (Unlimited) |
Matsayin Farko / Matsayin RoHS | Lead free / RoHS Compliant |
Ƙofar Ƙofar (Qg) (Max) @ Vgs | 25nC @ 4.5V |
FET Type | P-Channel |
FET Feature | - |
Fitar da Rigar (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Drain to Source Rashin wutar lantarki (Vdss) | 8V |
Bayanin Dalla-dalla | P-Channel 8V 2W (Ta) Surface Mount 6-TSOP |
A halin yanzu - Ci gaba mai dadi (Id) @ 25 ° C | - |