A stock: 56760
Muna mai rarraba kayan aiki na SIDR668DP-T1-GE3 tare da farashi mai gasa sosai.Bincika SIDR668DP-T1-GE3 Sabuwar hanyar pirce, kaya da kuma jigon lokacin yanzu ta amfani da saurin RFQ.Taronmu na da inganci da amincin SIDR668DP-T1-GE3 ba zai zama masu canzawa ba, kuma mun aiwatar da ingantacciyar dubawa da aiwatarwa don tabbatar da amincin SIDR668DP-T1-GE3.Hakanan zaka iya samun AAAE0 datasheet anan.
Daidaitaccen kayan aikin haɗin gwiwa SIDR668DP-T1-GE3
Vgs (th) (Max) @ Id | 3.4V @ 250µA |
---|---|
Vgs (Max) | ±20V |
Fasaha | MOSFET (Metal Oxide) |
Asusun na'ura mai ba da kyauta | PowerPAK® SO-8DC |
Sauti | TrenchFET® Gen IV |
Rds On (Max) @ Id, Vgs | 4.8 mOhm @ 20A, 10V |
Dissipation Power (Max) | 6.25W (Ta), 125W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | PowerPAK® SO-8 |
Sauran Sunaye | SIDR668DP-T1-GE3TR |
Temperayi mai aiki | -55°C ~ 150°C (TJ) |
Nau'in Sanya | Surface Mount |
Sensitivity Level (MSL) | 1 (Unlimited) |
Ma'aikaci Tsawon Gwaninta | 32 Weeks |
Matsayin Farko / Matsayin RoHS | Lead free / RoHS Compliant |
Ƙarfin shigarwa (Ciss) (Max) @ Vds | 5400pF @ 50V |
Ƙofar Ƙofar (Qg) (Max) @ Vgs | 108nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Fitar da Rigar (Max Rds On, Min Rds On) | 7.5V, 10V |
Drain to Source Rashin wutar lantarki (Vdss) | 100V |
Bayanin Dalla-dalla | N-Channel 100V 23.2A (Ta), 95A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC |
A halin yanzu - Ci gaba mai dadi (Id) @ 25 ° C | 23.2A (Ta), 95A (Tc) |